BSP135H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Max Dual Supply Voltage :

600V

Height :

1.5mm

Vgs (Max) :

±20V

Fall Time (Typ) :

182 ns

Length :

6.5mm

Power Dissipation :

1.8W

Turn-Off Delay Time :

28 ns

Transistor Element Material :

SILICON

Mount :

Surface Mount

Halogen Free :

Halogen Free

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

146pF @ 25V

Factory Lead Time :

10 Weeks

Width :

3.5mm

Time@Peak Reflow Temperature-Max (s) :

30

Rise Time :

5.6ns

Turn On Delay Time :

5.4 ns

Drain to Source Breakdown Voltage :

600V

Contact Plating :

Tin

Packaging :

Cut Tape (CT)

Terminal Position :

Dual

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

1.8W Ta

FET Feature :

Depletion Mode

Continuous Drain Current (ID) :

120mA

Number of Elements :

1

Number of Terminations :

4

Gate Charge (Qg) (Max) @ Vgs :

4.9nC @ 5V

Terminal Form :

Gull wing

Number of Pins :

4

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Recovery Time :

130 ns

Published :

2012

Package / Case :

TO-261-4, TO-261AA

FET Type :

N-Channel

Current :

12A

Vgs(th) (Max) @ Id :

1V @ 94µA

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

45 Ω @ 120mA, 10V

Series :

SIPMOS®

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

0V 10V

Current - Continuous Drain (Id) @ 25°C :

120mA Ta

Pin Count :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Voltage :

600V

Pbfree Code :

yes