BSP135 E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

1.8W Ta

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Terminal Finish :

Tin/Lead (Sn/Pb)

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

45 Ω @ 120mA, 10V

Drain-source On Resistance-Max :

60Ohm

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

1V @ 94µA

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

600V

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

0.3A

HTS Code :

8541.29.00.95

Number of Terminations :

4

Current - Continuous Drain (Id) @ 25°C :

120mA Ta

Vgs (Max) :

±20V

Series :

SIPMOS®

Package / Case :

TO-261-4, TO-261AA

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

0V 10V

Drain to Source Voltage (Vdss) :

600V

Number of Elements :

1

JESD-30 Code :

R-PDSO-G4

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e0

Drain Current-Max (Abs) (ID) :

0.1A

Published :

2007

Peak Reflow Temperature (Cel) :

260

FET Feature :

Depletion Mode

Pin Count :

4

Input Capacitance (Ciss) (Max) @ Vds :

146pF @ 25V

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

4.9nC @ 5V

FET Type :

N-Channel

RoHS Status :

Non-RoHS Compliant