BSP130,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Weight :

4.535924g

Number of Terminations :

4

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-261-4, TO-261AA

Published :

2001

Lead Free :

Lead Free

JESD-30 Code :

R-PDSO-G4

Terminal Form :

Gull wing

FET Type :

N-Channel

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

300V

REACH SVHC :

No SVHC

Power Dissipation-Max :

1.5W Ta

Power Dissipation :

1.5W

Threshold Voltage :

2V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

4

Vgs(th) (Max) @ Id :

2V @ 1mA

Length :

6.7mm

Number of Pins :

3

Surface Mount :

yes

Element Configuration :

Single

Width :

3.7mm

Resistance :

6Ohm

Nominal Vgs :

2 V

Time@Peak Reflow Temperature-Max (s) :

30

Factory Lead Time :

4 Weeks

Radiation Hardening :

No

Height :

1.7mm

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

120pF @ 25V

Case Connection :

DRAIN

Continuous Drain Current (ID) :

350mA

Terminal Position :

Dual

Max Dual Supply Voltage :

300V

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

350mA Ta

Rds On (Max) @ Id, Vgs :

6 Ω @ 250mA, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V