BSP129E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

0V 10V

Pulsed Drain Current-Max (IDM) :

0.6A

Number of Terminations :

4

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Rise Time :

10ns

Vgs (Max) :

±20V

Package / Case :

TO-261-4, TO-261AA

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

1.8W Ta

Vgs(th) (Max) @ Id :

1V @ 108µA

Number of Pins :

4

Current - Continuous Drain (Id) @ 25°C :

350mA Ta

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

20Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Power Dissipation :

1.8W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

4

FET Type :

N-Channel

FET Feature :

Depletion Mode

ECCN Code :

EAR99

Lead Free :

Contains Lead

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

350mA

Published :

2001

Transistor Element Material :

SILICON

Voltage - Rated DC :

240V

Gate Charge (Qg) (Max) @ Vgs :

5.7nC @ 5V

RoHS Status :

Non-RoHS Compliant

Series :

SIPMOS®

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

0.2A

Mount :

Surface Mount

Terminal Form :

Gull wing

Terminal Finish :

Tin/Lead (Sn/Pb)

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

JESD-609 Code :

e0

Current Rating :

280mA

Rds On (Max) @ Id, Vgs :

6 Ω @ 350mA, 10V

Input Capacitance (Ciss) (Max) @ Vds :

108pF @ 25V