BSP126,135

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Max Dual Supply Voltage :

250V

Drain Current-Max (Abs) (ID) :

0.375A

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Package / Case :

TO-261-4, TO-261AA

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

120pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Published :

2002

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

5Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Dual

Continuous Drain Current (ID) :

375mA

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

Power Dissipation-Max :

1.5W Ta

Vgs (Max) :

±20V

Number of Elements :

1

Radiation Hardening :

No

Transistor Element Material :

SILICON

Number of Pins :

4

Vgs(th) (Max) @ Id :

2V @ 1mA

Number of Terminations :

4

Pin Count :

4

Drain to Source Breakdown Voltage :

250V

Factory Lead Time :

4 Weeks

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

5 Ω @ 300mA, 10V

Case Connection :

DRAIN

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

375mA Ta

Power Dissipation :

1.5W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant