BSP 52 E6327

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Mfr.Part #
BSP 52 E6327
Manufacturer
Infineon Technologies
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS NPN DARL 80V 1A SOT-223
Stock
1,290
In Stock :
1,290

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - Bipolar (BJT) - Single
DC Current Gain (hFE) (Min) @ Ic, Vce :
2000 @ 500mA 10V
Surface Mount :
yes
Current - Collector Cutoff (Max) :
10μA
Frequency - Transition :
200MHz
Terminal Position :
Dual
Base Part Number :
BSP52
Power - Max :
1.5W
Published :
2011
Terminal Finish :
MATTE TIN
Transistor Element Material :
SILICON
Operating Temperature :
150°C TJ
Reach Compliance Code :
Compliant
JESD-609 Code :
e3
Transistor Type :
NPN - Darlington
Pbfree Code :
yes
Qualification Status :
Not Qualified
Power Dissipation-Max (Abs) :
1.5W
Voltage - Collector Emitter Breakdown (Max) :
80V
Current - Collector (Ic) (Max) :
1A
RoHS Status :
RoHS Compliant
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-261-4, TO-261AA
Peak Reflow Temperature (Cel) :
260
Turn On Time-Max (ton) :
400ns
Number of Terminations :
4
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
40
Terminal Form :
Gull wing
Vce Saturation (Max) @ Ib, Ic :
1.8V @ 1mA, 1A
Turn Off Time-Max (toff) :
1500ns
Transition Frequency :
200MHz
Polarity/Channel Type :
NPN
Case Connection :
COLLECTOR
Packaging :
Tape and Reel (TR)
Mounting Type :
Surface Mount
JESD-30 Code :
R-PDSO-G4
Datasheets
BSP 52 E6327
Introducing Transistors - Bipolar (BJT) - Single Infineon Technologies BSP 52 E6327 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:BSP52, Operating Temperature:150°C TJ, Package / Case:TO-261-4, TO-261AA, Number of Terminations:4, Mounting Type:Surface Mount, BSP 52 E6327 pinout, BSP 52 E6327 datasheet PDF, BSP 52 E6327 amp .Beyond Transistors - Bipolar (BJT) - Single Infineon Technologies BSP 52 E6327 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BSP 52 E6327


NPN - Darlington 150°C TJ 10μA 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

BSP 52 E6327 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 2000 @ 500mA 10V.When VCE saturation is 1.8V @ 1mA, 1A, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 200MHz.The device has a 80V maximal voltage - Collector Emitter Breakdown.

BSP 52 E6327 Features


the DC current gain for this device is 2000 @ 500mA 10V
the vce saturation(Max) is 1.8V @ 1mA, 1A
a transition frequency of 200MHz


BSP 52 E6327 Applications


There are a lot of Infineon Technologies
BSP 52 E6327 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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