BSP 51 E6327
- Mfr.Part #
- BSP 51 E6327
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 1A SOT223-4
- Stock
- 28,792
- In Stock :
- 28,792
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Base Part Number :
- BSP51
- Case Connection :
- COLLECTOR
- Current - Collector Cutoff (Max) :
- 10μA
- Configuration :
- DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
- Power - Max :
- 1.5W
- Reach Compliance Code :
- Compliant
- Reference Standard :
- AEC-Q101
- JESD-30 Code :
- R-PDSO-G4
- Number of Terminations :
- 4
- ECCN Code :
- EAR99
- Current - Collector (Ic) (Max) :
- 1A
- Terminal Position :
- Dual
- Transistor Type :
- NPN - Darlington
- Vce Saturation (Max) @ Ib, Ic :
- 1.8V @ 1mA, 1A
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency - Transition :
- 200MHz
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 500mA 10V
- Operating Temperature :
- 150°C TJ
- Pbfree Code :
- yes
- Pin Count :
- 4
- RoHS Status :
- RoHS Compliant
- Polarity/Channel Type :
- NPN
- Published :
- 2011
- Package / Case :
- TO-261-4, TO-261AA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Voltage - Collector Emitter Breakdown (Max) :
- 60V
- Transition Frequency :
- 200MHz
- Surface Mount :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- BSP 51 E6327

NPN - Darlington 150°C TJ 10μA 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BSP 51 E6327 Overview
DC current gain in this device equals 2000 @ 500mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.8V @ 1mA, 1A.As a result, the part has a transition frequency of 200MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
BSP 51 E6327 Features
the DC current gain for this device is 2000 @ 500mA 10V
the vce saturation(Max) is 1.8V @ 1mA, 1A
a transition frequency of 200MHz
BSP 51 E6327 Applications
There are a lot of Infineon Technologies
BSP 51 E6327 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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