BSO220N03MSGXUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

10.4nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

7A

Current - Continuous Drain (Id) @ 25°C :

7A Ta

Power Dissipation-Max :

1.56W Ta

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 15V

Series :

OptiMOS™

RoHS Status :

RoHS Compliant

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

FET Type :

N-Channel

Transistor Application :

SWITCHING

Published :

2011

Number of Elements :

1

Number of Pins :

8

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.022Ohm

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

DS Breakdown Voltage-Min :

30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

8

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

22m Ω @ 8.6A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

1.56W

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Package / Case :

8-SOIC (0.154, 3.90mm Width)