BSO083N03MSGXUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 250μA

Terminal Form :

Gull wing

Number of Elements :

1

RoHS Status :

RoHS Compliant

Rise Time :

5ns

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

2100pF @ 15V

Fall Time (Typ) :

5.4 ns

Number of Pins :

8

Terminal Position :

Dual

Mounting Type :

Surface Mount

Mount :

Surface Mount

Turn-Off Delay Time :

11.5 ns

DS Breakdown Voltage-Min :

30V

Power Dissipation-Max :

1.56W Ta

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Number of Terminations :

8

Series :

OptiMOS™

Power Dissipation :

1.56W

FET Type :

N-Channel

Radiation Hardening :

No

Turn On Delay Time :

9.4 ns

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Drain to Source Voltage (Vdss) :

30V

Published :

2011

Rds On (Max) @ Id, Vgs :

8.3m Ω @ 14A, 10V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Continuous Drain Current (ID) :

11A