BSO080P03SHXUMA1
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- Mfr.Part #
- BSO080P03SHXUMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 12.6A 8DSO
- Stock
- 9,001
- In Stock ：
- 9,001
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 130 ns
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Series :
- OptiMOS™
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 15 ns
- Max Dual Supply Voltage :
- -30V
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 12.6A Ta
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Drain to Source Voltage (Vdss) :
- 30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Halogen Free :
- Halogen Free
- Gate to Source Voltage (Vgs) :
- 25V
- Number of Pins :
- 8
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Type :
- P-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Rise Time :
- 22ns
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 110 ns
- Factory Lead Time :
- 18 Weeks
- Terminal Position :
- Dual
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 14.9A, 10V
- Lead Free :
- Lead Free
- Pin Count :
- 8
- Number of Terminations :
- 8
- Gate Charge (Qg) (Max) @ Vgs :
- 136nC @ 10V
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- REACH SVHC :
- No SVHC
- Pulsed Drain Current-Max (IDM) :
- 60A
- Input Capacitance (Ciss) (Max) @ Vds :
- 5890pF @ 25V
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 12.6A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Qualification Status :
- Not Qualified
- Threshold Voltage :
- -1.5V
- Power Dissipation-Max :
- 1.79W Ta
- Vgs (Max) :
- ±25V
- Published :
- 2008
- Datasheets
- BSO080P03SHXUMA1
P-Channel Tape & Reel (TR) 8m Ω @ 14.9A, 10V ±25V 5890pF @ 25V 136nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
BSO080P03SHXUMA1 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5890pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 12.6A amps.It is [130 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 60A.A turn-on delay time of 15 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.As it is powered by -30V, it can support the maximum dual supply voltage.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is -1.5V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
BSO080P03SHXUMA1 Features
a continuous drain current (ID) of 12.6A
the turn-off delay time is 130 ns
based on its rated peak drain current 60A.
a threshold voltage of -1.5V
a 30V drain to source voltage (Vdss)
BSO080P03SHXUMA1 Applications
There are a lot of Infineon Technologies
BSO080P03SHXUMA1 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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