BSO083N03MSG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Feature :

-

Terminal Finish :

Matte Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

27 nC @ 10 V

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

2100 pF @ 15 V

Rds On (Max) @ Id, Vgs :

8.3mOhm @ 14A, 10V

FET Type :

N-Channel

Technology :

MOSFET (Metal Oxide)

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Product Status :

Active

Package Shape :

RECTANGULAR

Pin Count :

8

Surface Mount :

yes

Polarity/Channel Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Number of Elements :

1

Terminal Form :

Gull wing

Series :

OptiMOS™ 3

Mounting Type :

Surface Mount

Power Dissipation-Max (Abs) :

2.5 W

Current - Continuous Drain (Id) @ 25°C :

11A (Ta)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Reach Compliance Code :

Compliant

Vgs(th) (Max) @ Id :

2V @ 250μA

DS Breakdown Voltage-Min :

30 V

Transistor Application :

SWITCHING

Number of Terminals :

8

Pbfree Code :

yes

Package :

Bulk

Power Dissipation (Max) :

1.56W (Ta)

Operating Temperature :

-55°C ~ 150°C (TJ)

Supplier Device Package :

PG-DSO-8

ECCN Code :

EAR99

Power Dissipation :

1.56

Drain to Source Voltage (Vdss) :

30 V

Transistor Element Material :

SILICON

Continuous Drain Current Id :

11

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-G8

Subcategory :

FET General Purpose Power

Drain Current-Max (Abs) (ID) :

11 A

Drain-source On Resistance-Max :

0.0083 Ω

Manufacturer :

Infineon Technologies AG

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Channel Type :

N

Terminal Position :

Dual

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V