BSO040N03MSGXUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation :

1.56W

FET Type :

N-Channel

Series :

OptiMOS™

JESD-609 Code :

e3

Mount :

Surface Mount

Rise Time :

9ns

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

30V

Drain-source On Resistance-Max :

0.004ohm

Number of Elements :

1

Number of Terminations :

8

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

16A Ta

Rds On (Max) @ Id, Vgs :

4m Ω @ 20A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

1.56W Ta

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Pins :

8

Vgs(th) (Max) @ Id :

2V @ 250μA

Continuous Drain Current (ID) :

16A

Published :

2009

Contact Plating :

Tin

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

73nC @ 10V

Terminal Form :

Gull wing

Terminal Position :

Dual

Factory Lead Time :

18 Weeks

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

30V

Input Capacitance (Ciss) (Max) @ Vds :

5700pF @ 15V

Mounting Type :

Surface Mount