BSO080P03NS3GXUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Halogen Free :

Halogen Free

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

1.6W Ta

Rds On (Max) @ Id, Vgs :

8m Ω @ 14.8A, 10V

Gate to Source Voltage (Vgs) :

25V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

6750pF @ 15V

Max Dual Supply Voltage :

-30V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

JESD-609 Code :

e3

Number of Pins :

8

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

14.8A

Published :

2011

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

18 Weeks

Mount :

Surface Mount

Number of Terminations :

8

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

30V

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

3.1V @ 150μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Rise Time :

47ns

Series :

OptiMOS™

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Power Dissipation :

1.6W

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

81nC @ 10V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Vgs (Max) :

±25V

Terminal Form :

Gull wing

FET Type :

P-Channel

Pin Count :

8

Contact Plating :

Tin

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

12A Ta