BSO051N03MS G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Published :

1999

Vgs(th) (Max) @ Id :

2V @ 250μA

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

30V

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-G8

Current - Continuous Drain (Id) @ 25°C :

14A Ta

DS Breakdown Voltage-Min :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

1.56W Ta

Mounting Type :

Surface Mount

Number of Terminations :

8

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

13A

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Series :

OptiMOS™

ECCN Code :

EAR99

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Position :

Dual

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

Compliant

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.0051Ohm

Input Capacitance (Ciss) (Max) @ Vds :

4300pF @ 15V

Rds On (Max) @ Id, Vgs :

5.1m Ω @ 18A, 10V