BSN254,126

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

250V

Vgs(th) (Max) @ Id :

2V @ 1mA

Surface Mount :

No

Packaging :

Tape and Box (TB)

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Published :

2002

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

310mA Ta

Number of Terminations :

3

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Drive Voltage (Max Rds On,Min Rds On) :

2.4V 10V

Drain-source On Resistance-Max :

7Ohm

Terminal Position :

BOTTOM

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

5 Ω @ 300mA, 10V

Number of Elements :

1

DS Breakdown Voltage-Min :

250V

FET Type :

N-Channel

Terminal Finish :

Tin

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

120pF @ 25V

JESD-30 Code :

O-PBCY-T3

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

0.3A

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

Unknown

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

1W Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Feedback Cap-Max (Crss) :

15 pF

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Vgs (Max) :

±20V