BSN20,235

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Power Dissipation :

830mW

Additional Feature :

LOGIC LEVEL COMPATIBLE

ECCN Code :

EAR99

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

50V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Series :

TrenchMOS™

Current - Continuous Drain (Id) @ 25°C :

173mA Ta

HTS Code :

8541.21.00.95

Number of Pins :

3

Terminal Form :

Gull wing

Package / Case :

TO-236-3, SC-59, SOT-23-3

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-65°C~150°C TJ

Rds On (Max) @ Id, Vgs :

15 Ω @ 100mA, 10V

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Feedback Cap-Max (Crss) :

8 pF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Published :

2017

Number of Elements :

1

Surface Mount :

yes

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

20Ohm

Radiation Hardening :

No

RoHS Status :

RoHS Compliant

Element Configuration :

Single

Power Dissipation-Max :

830mW Tc

Max Dual Supply Voltage :

50V

Vgs(th) (Max) @ Id :

1V @ 1mA

Contact Plating :

Tin

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Pin Count :

3

Number of Terminations :

3

Terminal Position :

Dual

Continuous Drain Current (ID) :

173mA

Input Capacitance (Ciss) (Max) @ Vds :

25pF @ 10V