BSN20Q-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

500mA

Drain to Source Voltage (Vdss) :

50V

Input Capacitance (Ciss) (Max) @ Vds :

40pF @ 10V

Drain Current-Max (Abs) (ID) :

0.5A

Terminal Finish :

Matte Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Feedback Cap-Max (Crss) :

10 pF

JESD-30 Code :

R-PDSO-G3

DS Breakdown Voltage-Min :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Factory Lead Time :

16 Weeks

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Operating Temperature (Max) :

150°C

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Number of Elements :

1

Mount :

Surface Mount

Additional Feature :

High Reliability

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

1.8 Ω @ 220mA, 10V

ECCN Code :

EAR99

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

0.8nC @ 10V

Power Dissipation-Max :

600mW Ta 920mW Tc

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

3

Published :

2013

Vgs (Max) :

±20V

Terminal Position :

Dual

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Series :

Automotive, AEC-Q101

Current - Continuous Drain (Id) @ 25°C :

500mA Ta