BSN20,215

Manufacturer :

NXP Semiconductors

Product Category :

Unclassified

Termination :

SMD/SMT

Threshold Voltage :

1 V

Transistor Element Material :

SILICON

RoHS :

Compliant

Gate to Source Voltage (Vgs) :

20 V

Number of Pins :

3

Terminal Form :

Gull wing

Package :

Bulk

Min Operating Temperature :

-65 °C

Rds On Max :

15 Ω

Element Configuration :

Single

Reach Compliance Code :

Compliant

Product Status :

Active

Manufacturer :

Nexperia

Mount :

Surface Mount

Package Shape :

RECTANGULAR

Width :

1.4 mm

Weight :

4.535924 g

Input Capacitance :

17 pF

Resistance :

15 Ω

Continuous Drain Current (ID) :

170 mA

Number of Terminals :

3

Dual Supply Voltage :

50 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Radiation Hardening :

No

JESD-609 Code :

e3

Max Power Dissipation :

830 mW

DS Breakdown Voltage-Min :

50 V

Terminal Finish :

Tin (Sn)

Feedback Cap-Max (Crss) :

8 pF

Drain-source On Resistance-Max :

20 Ω

Configuration :

SINGLE WITH BUILT-IN DIODE

Contact Plating :

Tin

Drain to Source Voltage (Vdss) :

50 V

Surface Mount :

yes

Drain to Source Resistance :

15 Ω

Additional Feature :

LOGIC LEVEL COMPATIBLE

JESD-30 Code :

R-PDSO-G3

Series :

*

Polarity/Channel Type :

N-Channel

ECCN Code :

EAR99

Number of Elements :

1

Max Dual Supply Voltage :

50 V

Length :

3 mm

Drain to Source Breakdown Voltage :

50 V

Nominal Vgs :

1 V

Power Dissipation :

830 mW

Lead Free :

Lead Free

Max Operating Temperature :

150 °C

Base Product Number :

BSN2

Operating Mode :

ENHANCEMENT MODE

Height :

1 mm

REACH SVHC :

No SVHC

Terminal Position :

Dual