BSN20BKR

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

265mA

Power Dissipation-Max :

310mW Ta

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Cut Tape (CT)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Dual

Number of Pins :

3

Published :

2014

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Mount :

Surface Mount

Mounting Type :

Surface Mount

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

0.49nC @ 4.5V

Contact Plating :

Tin

Factory Lead Time :

4 Weeks

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

2.8 Ω @ 200mA, 10V

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

60V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

5.1 ns

Terminal Form :

Gull wing

Feedback Cap-Max (Crss) :

7 pF

DS Breakdown Voltage-Min :

60V

Current - Continuous Drain (Id) @ 25°C :

265mA Ta

Drain Current-Max (Abs) (ID) :

0.265A

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

20.2pF @ 30V

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Rise Time :

8.4ns

Number of Elements :

1

Additional Feature :

LOGIC LEVEL COMPATIBLE

Turn On Delay Time :

7.9 ns

Turn-Off Delay Time :

12.5 ns