BSN20-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Radiation Hardening :

No

Terminal Position :

Dual

Power Dissipation :

600mW

Continuous Drain Current (ID) :

500mA

Published :

1997

Vgs(th) (Max) @ Id :

1.5V @ 250µA

FET Type :

N-Channel

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

0.5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

50V

ECCN Code :

EAR99

Weight :

7.994566mg

Factory Lead Time :

16 Weeks

Number of Terminations :

3

Rise Time :

2.99ns

Number of Elements :

1

Transistor Element Material :

SILICON

Pin Count :

3

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

600mW Ta

Input Capacitance (Ciss) (Max) @ Vds :

40pF @ 10V

Operating Temperature :

-55°C~150°C TJ

Height :

1.1mm

Number of Pins :

3

Turn-Off Delay Time :

9.45 ns

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

JESD-609 Code :

e3

Turn On Delay Time :

2.93 ns

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Element Configuration :

Single

Fall Time (Typ) :

8.3 ns

REACH SVHC :

No SVHC

Number of Channels :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Contact Plating :

Tin

Max Junction Temperature (Tj) :

150°C

Current - Continuous Drain (Id) @ 25°C :

500mA Ta

Rds On (Max) @ Id, Vgs :

1.8 Ω @ 220mA, 10V

Pbfree Code :

yes

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Additional Feature :

High Reliability

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

0.8nC @ 10V

Length :

3mm

Width :

1.4mm

Time@Peak Reflow Temperature-Max (s) :

40