BSL372SNH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Avalanche Energy Rating (Eas) :

33 mJ

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

1.8V @ 218μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

OptiMOS™

Pbfree Code :

yes

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Number of Terminations :

6

Terminal Form :

Gull wing

Published :

2013

FET Type :

N-Channel

Terminal Position :

Dual

Max Dual Supply Voltage :

100V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

14.3nC @ 10V

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

2A

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

329pF @ 25V

Drain Current-Max (Abs) (ID) :

2A

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

220m Ω @ 2A, 10V

Reference Standard :

AEC-Q101

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.22Ohm

JESD-30 Code :

R-PDSO-G6

Pulsed Drain Current-Max (IDM) :

8A

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

Halogen Free :

Halogen Free

Power Dissipation-Max :

2W Ta

Additional Feature :

AVALANCHE RATED

RoHS Status :

ROHS3 Compliant