BSF053N03LT G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-MBCC-N3

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

Terminal Position :

BOTTOM

Package / Case :

3-WDSON

Power Dissipation-Max :

2.2W Ta 42W Tc

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

284A

RoHS Status :

RoHS Compliant

Terminal Finish :

MATTE TIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

2700pF @ 15V

Published :

2009

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

30V

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Additional Feature :

AVALANCHE RATED

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Terminal Form :

NO LEAD

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

16A Ta 71A Tc

Drain Current-Max (Abs) (ID) :

16A

Pin Count :

3

Avalanche Energy Rating (Eas) :

75 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.0053Ohm

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

5.3m Ω @ 30A, 10V

Reach Compliance Code :

Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Series :

OptiMOS™

Number of Elements :

1

DS Breakdown Voltage-Min :

30V

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Surface Mount :

yes

Operating Temperature :

-40°C~150°C TJ