BSF045N03MQ3 G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Power Dissipation-Max (Abs) :

28W

JESD-30 Code :

R-MBCC-N2

Published :

2009

Drain Current-Max (Abs) (ID) :

18A

Input Capacitance (Ciss) (Max) @ Vds :

2600pF @ 15V

Terminal Position :

BOTTOM

Avalanche Energy Rating (Eas) :

30 mJ

Package / Case :

3-WDSON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-40°C~150°C TJ

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

18A Ta 63A Tc

Series :

OptiMOS™

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

252A

Reach Compliance Code :

Compliant

DS Breakdown Voltage-Min :

30V

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 20A, 10V

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Pbfree Code :

yes

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

30V

Drain-source On Resistance-Max :

0.0059Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Qualification Status :

Not Qualified

Number of Terminations :

2

Mounting Type :

Surface Mount

Surface Mount :

yes

RoHS Status :

RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

NO LEAD

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2.2V @ 250µA