BSF024N03LT3G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Feature :

-

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

125 mJ

Rds On (Max) @ Id, Vgs :

2.4mOhm @ 20A, 10V

Transistor Element Material :

SILICON

Reach Compliance Code :

Compliant

Case Connection :

DRAIN

Terminal Form :

NO LEAD

Power Dissipation (Max) :

2.2W (Ta), 42W (Tc)

Current - Continuous Drain (Id) @ 25°C :

15A (Ta), 106A (Tc)

Series :

OptiMOS™3

Technology :

MOSFET (Metal Oxide)

Product Status :

Active

Channel Type :

N

Subcategory :

FET General Purpose Power

Gate Charge (Qg) (Max) @ Vgs :

71 nC @ 10 V

Package / Case :

DirectFET™ Isometric MX

Polarity/Channel Type :

N-Channel

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Drain to Source Voltage (Vdss) :

30 V

Drain-source On Resistance-Max :

0.0032 Ω

Package :

Bulk

Mounting Type :

Surface Mount

Manufacturer :

Infineon Technologies AG

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max (Abs) :

42 W

DS Breakdown Voltage-Min :

30 V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

JESD-30 Code :

R-MBCC-N3

Number of Terminals :

3

FET Type :

N-Channel

Supplier Device Package :

MG-WDSON-2

Pin Count :

3

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Pbfree Code :

yes

Continuous Drain Current Id :

15

Input Capacitance (Ciss) (Max) @ Vds :

5500 pF @ 15 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain Current-Max (Abs) (ID) :

106 A

Package Shape :

RECTANGULAR

ECCN Code :

EAR99

Terminal Position :

BOTTOM

Operating Temperature :

-40°C ~ 150°C (TJ)

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

400 A

HTS Code :

8541.29.00.95