BSF024N03LT3GXUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 20A, 10V

Pin Count :

3

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

3

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

5500pF @ 15V

Vgs(th) (Max) @ Id :

2.2V @ 250µA

FET Type :

N-Channel

Operating Temperature :

-40°C~150°C TJ

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

15A

Fall Time (Typ) :

4.8 ns

Radiation Hardening :

No

RoHS Status :

RoHS Compliant

Pbfree Code :

yes

Power Dissipation-Max :

2.2W Ta 42W Tc

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

71nC @ 10V

Terminal Position :

BOTTOM

Package / Case :

3-WDSON

Power Dissipation :

2.2W

Packaging :

Tape and Reel (TR)

Series :

OptiMOS™

Published :

2011

Current - Continuous Drain (Id) @ 25°C :

15A Ta 106A Tc

Turn On Delay Time :

5.7 ns

Mount :

Surface Mount

Turn-Off Delay Time :

29 ns

Rise Time :

5.6ns

ECCN Code :

EAR99

Case Connection :

DRAIN

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

400A