BSF035NE2LQXUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

22A

Drain to Source Breakdown Voltage :

25V

Number of Elements :

1

Number of Pins :

3

FET Type :

N-Channel

HTS Code :

8541.29.00.95

Terminal Position :

BOTTOM

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 30A, 10V

Drain-source On Resistance-Max :

0.0046Ohm

Operating Temperature :

-40°C~150°C TJ

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

69A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

OptiMOS™

JESD-609 Code :

e4

Vgs(th) (Max) @ Id :

2V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

2.2W Ta 28W Tc

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

50 mJ

Package / Case :

3-WDSON

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

RoHS Status :

ROHS3 Compliant

Published :

2013

Input Capacitance (Ciss) (Max) @ Vds :

1862pF @ 12V

Terminal Form :

NO LEAD

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

276A

Terminal Finish :

Silver/Nickel (Ag/Ni)

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

22A Ta 69A Tc

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Transistor Element Material :

SILICON

Factory Lead Time :

26 Weeks