BSF030NE2LQXUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

300A

Drain-source On Resistance-Max :

0.0041Ohm

Pin Count :

2

Pbfree Code :

yes

ECCN Code :

EAR99

Number of Pins :

6

HTS Code :

8541.29.00.95

Drain to Source Voltage (Vdss) :

25V

Series :

OptiMOS™

Number of Terminations :

2

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Package / Case :

3-WDSON

Threshold Voltage :

2V

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2V @ 250μA

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Case Connection :

DRAIN

Transistor Application :

SWITCHING

FET Type :

N-Channel

JESD-609 Code :

e4

Continuous Drain Current (ID) :

24A

Current - Continuous Drain (Id) @ 25°C :

24A Ta 75A Tc

Mount :

Surface Mount

Rise Time :

3.4ns

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

3m Ω @ 30A, 10V

Turn On Delay Time :

2.8 ns

Number of Elements :

1

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

26 Weeks

Turn-Off Delay Time :

18 ns

Operating Temperature :

-40°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 12V

Published :

2001

Mounting Type :

Surface Mount

Fall Time (Typ) :

2.6 ns

Contact Plating :

Silver

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

DS Breakdown Voltage-Min :

25V

JESD-30 Code :

R-MBCC-N2

Avalanche Energy Rating (Eas) :

50 mJ

Power Dissipation-Max :

2.2W Ta 28W Tc

Terminal Position :

BOTTOM

Drain Current-Max (Abs) (ID) :

75A