BSC265N10LSFGATMA1
- Mfr.Part #
- BSC265N10LSFGATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 6.5A/40A TDSON
- Stock
- 45,107
- In Stock :
- 45,107
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain Current-Max (Abs) (ID) :
- 6.5A
- Drain-source On Resistance-Max :
- 0.0265Ohm
- Factory Lead Time :
- 13 Weeks
- Max Dual Supply Voltage :
- 100V
- Rise Time :
- 24ns
- Published :
- 2011
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Terminal Position :
- Dual
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 78W Tc
- Vgs(th) (Max) @ Id :
- 2.4V @ 43μA
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 26.5m Ω @ 20A, 10V
- Mount :
- Surface Mount
- Power Dissipation :
- 78W
- Number of Elements :
- 1
- JESD-30 Code :
- R-PDSO-F5
- Threshold Voltage :
- 1.85V
- JESD-609 Code :
- e3
- Number of Pins :
- 8
- Case Connection :
- DRAIN
- Package / Case :
- 8-PowerTDFN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 20V
- Pbfree Code :
- No
- Continuous Drain Current (ID) :
- 40A
- Qualification Status :
- Not Qualified
- Input Capacitance (Ciss) (Max) @ Vds :
- 1600pF @ 50V
- Contact Plating :
- Tin
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- RoHS Status :
- ROHS3 Compliant
- Series :
- OptiMOS™
- REACH SVHC :
- No SVHC
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 21nC @ 10V
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 6.5A Ta 40A Tc
- Terminal Form :
- Flat
- Lead Free :
- Contains Lead
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Reach Compliance Code :
- not_compliant
- Pin Count :
- 8
- Number of Terminations :
- 5
- Halogen Free :
- Halogen Free
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- BSC265N10LSFGATMA1

N-Channel Tape & Reel (TR) 26.5m Ω @ 20A, 10V ±20V 1600pF @ 50V 21nC @ 10V 8-PowerTDFN
BSC265N10LSFGATMA1 Description
A N-Channel Power MOSFET from Infineon Technologies, the BSC265N10LSFGATMA1, is made for high-performance uses such the primary-side switch in flyback converters, AC-DC adapters, and low-power drives. The device is suited for usage in applications including motor drives, power supplies, and lighting thanks to its remarkable 100V drain-source voltage rating and continuous drain current rating of up to 26A.
With the use of cutting-edge technology, the MOSFET can lower on-resistance while maintaining exceptional switching performance, which reduces power losses and boosts efficiency. The device's ability to operate at frequencies up to 100 kHz allows for quicker switching rates than those offered by other MOSFETS in its class, which enhances performance in a variety of applications.
BSC265N10LSFGATMA1 Features
-
Low Gate Charge
-
Low On-resistance
-
High Current Rating
-
High Voltage Rating
-
Fast Switching Speeds
-
RoHS Compliant and Environmentally friendly
BSC265N10LSFGATMA1 Applications
-
Lighting
-
Power Supplies
-
Audio Amplifiers
-
Solar Power Systems
-
Motor Control Systems
-
Electronic Load Switches
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