BSC252N10NSFGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 50V

Transistor Application :

SWITCHING

Number of Terminations :

5

Contact Plating :

Tin

Power Dissipation-Max :

78W Tc

Number of Pins :

8

ECCN Code :

EAR99

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 43μA

Qualification Status :

Not Qualified

Series :

OptiMOS™

Published :

2010

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

7.2A

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Flat

Max Dual Supply Voltage :

100V

Drain-source On Resistance-Max :

0.0252Ohm

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Pin Count :

8

Package / Case :

8-PowerTDFN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

Factory Lead Time :

13 Weeks

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

7.2A Ta 40A Tc

Pbfree Code :

No

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

78W

JESD-30 Code :

R-PDSO-F5

Reach Compliance Code :

not_compliant

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

25.2m Ω @ 20A, 10V

Halogen Free :

Halogen Free

JESD-609 Code :

e3

Lead Free :

Contains Lead

Case Connection :

DRAIN

Rise Time :

21ns