BSC200P03LSGAUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

9.9A Ta 12.5A Tc

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

OptiMOS™

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Rds On (Max) @ Id, Vgs :

20m Ω @ 12.5A, 10V

DS Breakdown Voltage-Min :

30V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

ECCN Code :

EAR99

Power Dissipation-Max :

2.5W Ta 63W Tc

Drain to Source Voltage (Vdss) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

9.9A

Gate Charge (Qg) (Max) @ Vgs :

48.5nC @ 10V

Pulsed Drain Current-Max (IDM) :

50A

Vgs(th) (Max) @ Id :

2.2V @ 100μA

Package / Case :

8-PowerTDFN

Number of Elements :

1

Number of Pins :

8

Continuous Drain Current (ID) :

12.5A

Qualification Status :

Not Qualified

Vgs (Max) :

±25V

Drain-source On Resistance-Max :

0.02Ohm

Terminal Form :

Flat

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-F5

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

2430pF @ 15V

Pin Count :

8

Terminal Position :

Dual

Published :

2011

Case Connection :

DRAIN

Number of Terminations :

5

Mount :

Surface Mount

Reach Compliance Code :

Unknown

FET Type :

P-Channel