BSC22DN20NS3GATMA1
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- Mfr.Part #
- BSC22DN20NS3GATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 7A TDSON-8-5
- Stock
- 2
- In Stock ：
- 2
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Form :
- Flat
- Vgs(th) (Max) @ Id :
- 4V @ 13μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Lead Free :
- Contains Lead
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 7A
- Current - Continuous Drain (Id) @ 25°C :
- 7A Tc
- Threshold Voltage :
- 3V
- Factory Lead Time :
- 26 Weeks
- Max Dual Supply Voltage :
- 200V
- Transistor Application :
- SWITCHING
- Drain Current-Max (Abs) (ID) :
- 7A
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- OptiMOS™
- JESD-30 Code :
- R-PDSO-F5
- Drain-source On Resistance-Max :
- 0.225Ohm
- Qualification Status :
- Not Qualified
- Number of Pins :
- 8
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 5.6nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 430pF @ 100V
- Mounting Type :
- Surface Mount
- Case Connection :
- DRAIN
- Halogen Free :
- Halogen Free
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- 8-PowerTDFN
- Published :
- 2006
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 34W Tc
- Contact Plating :
- Tin
- Power Dissipation :
- 34W
- Rise Time :
- 4ns
- REACH SVHC :
- No SVHC
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 30 mJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pin Count :
- 8
- Pbfree Code :
- No
- Rds On (Max) @ Id, Vgs :
- 225m Ω @ 3.5A, 10V
- Number of Terminations :
- 5
- Datasheets
- BSC22DN20NS3GATMA1
N-Channel Tape & Reel (TR) 225m Ω @ 3.5A, 10V ±20V 430pF @ 100V 5.6nC @ 10V 8-PowerTDFN
BSC22DN20NS3GATMA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 30 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 430pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 7A.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 200V.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 3V.In addition to reducing power consumption, this device uses drive voltage (10V).
BSC22DN20NS3GATMA1 Features
the avalanche energy rating (Eas) is 30 mJ
a continuous drain current (ID) of 7A
a threshold voltage of 3V
BSC22DN20NS3GATMA1 Applications
There are a lot of Infineon Technologies
BSC22DN20NS3GATMA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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