BSC205N10LSG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

180A

Terminal Position :

Dual

Pbfree Code :

yes

JESD-30 Code :

R-PDSO-F5

Input Capacitance (Ciss) (Max) @ Vds :

2900pF @ 50V

Reach Compliance Code :

Compliant

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

76W Tc

JESD-609 Code :

e3

Published :

2008

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

20.5m Ω @ 45A, 10V

Package / Case :

8-PowerTDFN

Drain-source On Resistance-Max :

0.0205Ohm

ECCN Code :

EAR99

FET Type :

N-Channel

Vgs (Max) :

±20V

Terminal Form :

Flat

Number of Elements :

1

Avalanche Energy Rating (Eas) :

60 mJ

RoHS Status :

RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Series :

OptiMOS™

Terminal Finish :

MATTE TIN

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

LOGIC LEVEL COMPATIBLE

Peak Reflow Temperature (Cel) :

260

Pin Count :

8

Number of Terminations :

5

DS Breakdown Voltage-Min :

100V

Vgs(th) (Max) @ Id :

2.4V @ 43μA

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

7.4A Ta 45A Tc

Drain to Source Voltage (Vdss) :

100V

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

7.4A