BSC200P03LSG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Flat

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Avalanche Energy Rating (Eas) :

98 mJ

DS Breakdown Voltage-Min :

30 V

Power Dissipation (Max) :

2.5W (Ta), 63W (Tc)

Subcategory :

Other Transistors

Transistor Element Material :

SILICON

Polarity/Channel Type :

P-Channel

ECCN Code :

EAR99

Number of Elements :

1

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Surface Mount :

yes

Operating Temperature :

-55°C ~ 150°C (TJ)

Package Shape :

RECTANGULAR

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

Compliant

Transistor Application :

SWITCHING

FET Feature :

-

Pin Count :

8

Vgs (Max) :

±25V

Drain Current-Max (Abs) (ID) :

12.5 A

Gate Charge (Qg) (Max) @ Vgs :

48.5 nC @ 10 V

Number of Terminals :

5

Technology :

MOSFET (Metal Oxide)

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Drive Voltage (Max Rds On, Min Rds On) :

10V

Continuous Drain Current Id :

9.9

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

2430 pF @ 15 V

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

30 V

Rds On (Max) @ Id, Vgs :

20mOhm @ 12.5A, 10V

Package :

Bulk

Pulsed Drain Current-Max (IDM) :

50 A

Channel Type :

P

Vgs(th) (Max) @ Id :

1V @ 100µA

Manufacturer :

Infineon Technologies AG

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

OptiMOS®

Supplier Device Package :

PG-TDSON-8-6

Terminal Finish :

MATTE TIN

JESD-30 Code :

R-PDSO-F5

Package / Case :

8-PowerTDFN

Current - Continuous Drain (Id) @ 25°C :

9.9A (Ta), 12.5A (Tc)

Product Status :

Active

Power Dissipation-Max (Abs) :

63 W

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.02 Ω