BSC200P03LSG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

2.5W (Ta), 63W (Tc)

Package :

Bulk

Avalanche Energy Rating (Eas) :

98 mJ

Gate Charge (Qg) (Max) @ Vgs :

48.5 nC @ 10 V

Polarity/Channel Type :

P-Channel

DS Breakdown Voltage-Min :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C ~ 150°C (TJ)

Qualification Status :

Not Qualified

Terminal Form :

Flat

Drain Current-Max (Abs) (ID) :

12.5 A

Terminal Position :

Dual

ECCN Code :

EAR99

Package Shape :

RECTANGULAR

Transistor Application :

SWITCHING

Number of Terminals :

5

Power Dissipation-Max (Abs) :

63 W

Input Capacitance (Ciss) (Max) @ Vds :

2430 pF @ 15 V

Continuous Drain Current Id :

9.9

Vgs(th) (Max) @ Id :

1V @ 100µA

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.02 Ω

Channel Type :

P

Pulsed Drain Current-Max (IDM) :

50 A

FET Feature :

-

Rds On (Max) @ Id, Vgs :

20mOhm @ 12.5A, 10V

Terminal Finish :

MATTE TIN

Surface Mount :

yes

Subcategory :

Other Transistors

Series :

OptiMOS®

Drain to Source Voltage (Vdss) :

30 V

Current - Continuous Drain (Id) @ 25°C :

9.9A (Ta), 12.5A (Tc)

Pin Count :

8

FET Type :

P-Channel

Case Connection :

DRAIN

Supplier Device Package :

PG-TDSON-8-6

JESD-30 Code :

R-PDSO-F5

Vgs (Max) :

±25V

Reach Compliance Code :

Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

8-PowerTDFN

Manufacturer :

Infineon Technologies AG

Operating Mode :

ENHANCEMENT MODE

Technology :

MOSFET (Metal Oxide)

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Product Status :

Active