BSC196N10NSGATMA1
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- Mfr.Part #
- BSC196N10NSGATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 8.5A/45A TDSON
- Stock
- 24,319
- In Stock ：
- 24,319
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Number of Terminations :
- 5
- Continuous Drain Current (ID) :
- 45A
- Vgs(th) (Max) @ Id :
- 4V @ 42μA
- JESD-30 Code :
- R-PDSO-F5
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Pin Count :
- 8
- Vgs (Max) :
- ±20V
- Power Dissipation :
- 78W
- Threshold Voltage :
- 3V
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 19.6m Ω @ 45A, 10V
- Published :
- 2011
- Current - Continuous Drain (Id) @ 25°C :
- 8.5A Ta 45A Tc
- Mounting Type :
- Surface Mount
- Avalanche Energy Rating (Eas) :
- 60 mJ
- Series :
- OptiMOS™
- Terminal Position :
- Dual
- Pbfree Code :
- No
- Max Dual Supply Voltage :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Factory Lead Time :
- 26 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 78W Tc
- Halogen Free :
- Halogen Free
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Pins :
- 8
- Qualification Status :
- Not Qualified
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 34nC @ 10V
- Lead Free :
- Contains Lead
- Terminal Form :
- Flat
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Reach Compliance Code :
- not_compliant
- REACH SVHC :
- No SVHC
- Input Capacitance (Ciss) (Max) @ Vds :
- 2300pF @ 50V
- Rise Time :
- 22ns
- Package / Case :
- 8-PowerTDFN
- Datasheets
- BSC196N10NSGATMA1
N-Channel Tape & Reel (TR) 19.6m Ω @ 45A, 10V ±20V 2300pF @ 50V 34nC @ 10V 8-PowerTDFN
BSC196N10NSGATMA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 60 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2300pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 100V.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 3V.In addition to reducing power consumption, this device uses drive voltage (10V).
BSC196N10NSGATMA1 Features
the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of 45A
a threshold voltage of 3V
BSC196N10NSGATMA1 Applications
There are a lot of Infineon Technologies
BSC196N10NSGATMA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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