BSC117N08NS5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

80V

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 40V

Weight :

506.605978mg

Vgs(th) (Max) @ Id :

3.8V @ 22μA

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

19A

Turn-Off Delay Time :

16 ns

Packaging :

Tape and Reel (TR)

Terminal Form :

Flat

Case Connection :

DRAIN

Fall Time (Typ) :

3 ns

Series :

OptiMOS™

Turn On Delay Time :

10 ns

Lead Free :

Contains Lead

Max Junction Temperature (Tj) :

150°C

Terminal Position :

Dual

Published :

2013

Number of Pins :

8

Rise Time :

4ns

Transistor Element Material :

SILICON

Factory Lead Time :

26 Weeks

Height :

1.1mm

Pbfree Code :

yes

JESD-30 Code :

R-PDSO-F5

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Number of Terminations :

5

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

11.7m Ω @ 25A, 10V

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

49A Tc

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Power Dissipation-Max :

2.5W Ta 50W Tc

Element Configuration :

Single

Halogen Free :

Halogen Free

Power Dissipation :

2.5W

Package / Case :

8-PowerTDFN

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Max Dual Supply Voltage :

80V

Operating Temperature :

-55°C~150°C TJ