BSC110N15NS5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

11mOhm @ 38A, 10V

Drain to Source Breakdown Voltage :

150V

Number of Channels :

1

Series :

OptiMOS™

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Turn On Delay Time :

10.3 ns

Published :

2008

Turn-Off Delay Time :

14.5 ns

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

76A

Factory Lead Time :

26 Weeks

Min Operating Temperature :

-55°C

Height :

1.1mm

Drive Voltage (Max Rds On,Min Rds On) :

8V 10V

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Max Operating Temperature :

150°C

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4.6V @ 91μA

Package / Case :

8-PowerTDFN

Drain to Source Resistance :

9mOhm

Max Junction Temperature (Tj) :

150°C

Input Capacitance (Ciss) (Max) @ Vds :

2770pF @ 75V

Power Dissipation :

125W

Mounting Type :

Surface Mount

Power Dissipation-Max :

125W Tc

Current - Continuous Drain (Id) @ 25°C :

76A Tc

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

150V

Supplier Device Package :

PG-TDSON-8-7