BSC100N06LS3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Number of Terminations :

5

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Reach Compliance Code :

not_compliant

Vgs(th) (Max) @ Id :

2.2V @ 23μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

OptiMOS™

Input Capacitance (Ciss) (Max) @ Vds :

3500pF @ 30V

Turn On Delay Time :

8 ns

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Power Dissipation-Max :

2.5W Ta 50W Tc

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

10m Ω @ 50A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Lead Free :

Contains Lead

Pulsed Drain Current-Max (IDM) :

200A

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Factory Lead Time :

13 Weeks

Avalanche Energy Rating (Eas) :

22 mJ

Rise Time :

58ns

Pin Count :

8

JESD-30 Code :

R-PDSO-F5

Power Dissipation :

2.5W

Published :

2011

Terminal Form :

Flat

Mount :

Surface Mount

Pbfree Code :

No

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

12A Ta 50A Tc

Continuous Drain Current (ID) :

12A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Max Dual Supply Voltage :

60V

ECCN Code :

EAR99

Number of Pins :

8

Package / Case :

8-PowerTDFN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Qualification Status :

Not Qualified

FET Type :

N-Channel

Case Connection :

DRAIN

Halogen Free :

Halogen Free

Turn-Off Delay Time :

19 ns

Terminal Finish :

Tin (Sn)