BSC100N06LS3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2.2V @ 23μA

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

12A Ta 50A Tc

Vgs (Max) :

±20V

Case Connection :

DRAIN

Halogen Free :

Halogen Free

Avalanche Energy Rating (Eas) :

22 mJ

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Factory Lead Time :

13 Weeks

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn On Delay Time :

8 ns

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

12A

Published :

2011

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PDSO-F5

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Terminal Form :

Flat

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

OptiMOS™

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

2.5W Ta 50W Tc

Pulsed Drain Current-Max (IDM) :

200A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-PowerTDFN

Power Dissipation :

2.5W

Lead Free :

Contains Lead

Operating Temperature :

-55°C~150°C TJ

Max Dual Supply Voltage :

60V

Input Capacitance (Ciss) (Max) @ Vds :

3500pF @ 30V

Mount :

Surface Mount

Turn-Off Delay Time :

19 ns

Number of Pins :

8

Rise Time :

58ns

FET Type :

N-Channel

Pin Count :

8

Pbfree Code :

No

Number of Terminations :

5

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

10m Ω @ 50A, 10V