BSC112N06LDATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

11.2m Ω @ 17A, 10V

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Package / Case :

8-PowerVDFN

FET Feature :

Logic Level Gate

Drain to Source Voltage (Vdss) :

60V

Mounting Type :

Surface Mount

Power - Max :

65W Tc

Input Capacitance (Ciss) (Max) @ Vds :

4020pF @ 30V

Factory Lead Time :

26 Weeks

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Vgs(th) (Max) @ Id :

2.2V @ 28μA

Series :

OptiMOS™-T2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant