BSC100N10NSFGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

1999

Number of Terminations :

5

Lead Free :

Contains Lead

Power Dissipation-Max :

156W Tc

Qualification Status :

Not Qualified

Pin Count :

8

FET Type :

N-Channel

Transistor Application :

SWITCHING

Pbfree Code :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

156W

Continuous Drain Current (ID) :

11.4A

REACH SVHC :

No SVHC

JESD-30 Code :

R-PDSO-F5

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-PowerTDFN

Max Dual Supply Voltage :

100V

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

10m Ω @ 25A, 10V

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

2900pF @ 50V

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 110μA

Turn On Delay Time :

18 ns

Fall Time (Typ) :

7 ns

Factory Lead Time :

26 Weeks

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

360A

Number of Elements :

1

Turn-Off Delay Time :

26 ns

Halogen Free :

Halogen Free

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

11.4A Ta 90A Tc

Series :

OptiMOS™

Number of Pins :

8

Terminal Finish :

Tin (Sn)

Terminal Form :

Flat

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Avalanche Energy Rating (Eas) :

377 mJ

Rise Time :

23ns