BSC190N15NS3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

19m Ω @ 50A, 10V

Number of Pins :

8

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Fall Time (Typ) :

6 ns

Transistor Application :

SWITCHING

Power Dissipation :

125W

Mounting Type :

Surface Mount

Turn On Delay Time :

15 ns

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-PowerTDFN

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

2420pF @ 75V

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

150V

Vgs (Max) :

±20V

Number of Terminations :

5

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Surface Mount

Lead Free :

Contains Lead

ECCN Code :

EAR99

Max Dual Supply Voltage :

150V

Power Dissipation-Max :

125W Tc

Turn-Off Delay Time :

25 ns

Number of Channels :

1

Reach Compliance Code :

not_compliant

Rise Time :

53ns

Pin Count :

8

Pbfree Code :

No

JESD-30 Code :

R-PDSO-F5

Transistor Element Material :

SILICON

Terminal Position :

Dual

Pulsed Drain Current-Max (IDM) :

200A

Series :

OptiMOS™

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

Max Junction Temperature (Tj) :

150°C

JESD-609 Code :

e3

Terminal Form :

Flat

Published :

2011

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Halogen Free :

Halogen Free

Threshold Voltage :

3V

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

8V 10V

Vgs(th) (Max) @ Id :

4V @ 90µA

Height :

1.1mm

Factory Lead Time :

13 Weeks

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

50A

FET Type :

N-Channel