BSC160N15NS5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Package / Case :

8-PowerTDFN

Continuous Drain Current (ID) :

56A

Terminal Position :

Dual

Pulsed Drain Current-Max (IDM) :

224A

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

4.6V @ 60μA

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

9.6 ns

Number of Terminations :

5

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Turn-Off Delay Time :

10.8 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

8V 10V

Transistor Application :

SWITCHING

Published :

2013

Height :

1.1mm

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

23.1nC @ 10V

Power Dissipation :

96W

Input Capacitance (Ciss) (Max) @ Vds :

1820pF @ 75V

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

16m Ω @ 28A, 10V

Transistor Element Material :

SILICON

Terminal Form :

Flat

JESD-30 Code :

R-PDSO-F5

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1

Series :

OptiMOS™

Power Dissipation-Max :

96W Tc

Drain to Source Breakdown Voltage :

150V

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

43 mJ

Max Junction Temperature (Tj) :

150°C

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

not_compliant

FET Type :

N-Channel

Factory Lead Time :

26 Weeks

Surface Mount :

yes