BSC152N10NSFGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

15.2m Ω @ 25A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

114W Tc

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Pin Count :

8

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 50V

Turn On Delay Time :

14 ns

Turn-Off Delay Time :

22 ns

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 72µA

Terminal Form :

Flat

Current - Continuous Drain (Id) @ 25°C :

9.4A Ta 63A Tc

Continuous Drain Current (ID) :

9.4A

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

252A

Package / Case :

8-PowerTDFN

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Number of Terminations :

5

Power Dissipation :

114W

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Rise Time :

24ns

Series :

OptiMOS™

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

6 ns

Radiation Hardening :

No

Pbfree Code :

No

JESD-30 Code :

R-PDSO-F5

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2008

Drain to Source Voltage (Vdss) :

100V

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Transistor Application :

SWITCHING

Terminal Position :

Dual

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON