BSC152N10NSFG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Polarity/Channel Type :

N-Channel

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Package / Case :

8-PowerTDFN

FET Feature :

-

Mounting Type :

Surface Mount

Pin Count :

8

Manufacturer :

Infineon Technologies AG

Subcategory :

FET General Purpose Power

Drain-source On Resistance-Max :

0.0152 Ω

Avalanche Energy Rating (Eas) :

155 mJ

Supplier Device Package :

PG-TDSON-8

Power Dissipation-Max (Abs) :

114 W

Number of Elements :

1

Drive Voltage (Max Rds On, Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

9.4A (Ta), 63A (Tc)

Reach Compliance Code :

Unknown

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn)

Number of Terminals :

5

Transistor Element Material :

SILICON

Surface Mount :

yes

Technology :

MOSFET (Metal Oxide)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

4V @ 72µA

Drain Current-Max (Abs) (ID) :

63 A

Drain to Source Voltage (Vdss) :

100 V

ECCN Code :

EAR99

Terminal Position :

Dual

Terminal Form :

Flat

Input Capacitance (Ciss) (Max) @ Vds :

1900 pF @ 50 V

Continuous Drain Current Id :

9.4

Product Status :

Active

Channel Type :

N

Operating Temperature :

-55°C ~ 150°C (TJ)

Package Shape :

RECTANGULAR

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

29 nC @ 10 V

Operating Mode :

ENHANCEMENT MODE

Package :

Bulk

Pbfree Code :

yes

JESD-30 Code :

R-PDSO-F5

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

252 A

Series :

OptiMOS™2

Rds On (Max) @ Id, Vgs :

15.2mOhm @ 25A, 10V

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

100 V

Vgs (Max) :

±20V

Power Dissipation (Max) :

114W (Tc)

Configuration :

SINGLE WITH BUILT-IN DIODE