BSC13DN30NSFDATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Series :

OptiMOS™

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

2450pF @ 150V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4V @ 90µA

Drain Current-Max (Abs) (ID) :

16A

Number of Terminations :

5

Published :

2013

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Flat

Package / Case :

8-PowerTDFN

Pulsed Drain Current-Max (IDM) :

64A

Drain-source On Resistance-Max :

0.13Ohm

Terminal Finish :

Tin (Sn)

DS Breakdown Voltage-Min :

300V

Power Dissipation-Max :

150W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

56 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

300V

Number of Elements :

1

Mounting Type :

Surface Mount

Reach Compliance Code :

not_compliant

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

26 Weeks

Rds On (Max) @ Id, Vgs :

130m Ω @ 16A, 10V

JESD-30 Code :

R-PDSO-F5

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V