BSC12DN20NS3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

not_compliant

Gate Charge (Qg) (Max) @ Vgs :

8.7nC @ 10V

Continuous Drain Current (ID) :

11.3A

Factory Lead Time :

26 Weeks

Pbfree Code :

No

Vgs (Max) :

±20V

Published :

2010

JESD-30 Code :

R-PDSO-F5

Rds On (Max) @ Id, Vgs :

125m Ω @ 5.7A, 10V

Series :

OptiMOS™

Power Dissipation-Max :

50W Tc

Terminal Form :

Flat

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Package / Case :

8-PowerTDFN

Number of Terminations :

5

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

45A

Turn On Delay Time :

6 ns

RoHS Status :

ROHS3 Compliant

Rise Time :

4ns

Fall Time (Typ) :

3 ns

Pin Count :

8

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Lead Free :

Contains Lead

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn-Off Delay Time :

10 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Mount :

Surface Mount

Transistor Application :

SWITCHING

Halogen Free :

Halogen Free

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 100V

Max Dual Supply Voltage :

200V

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

11.3A Tc

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

60 mJ

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

4V @ 25μA

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.125Ohm

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Pins :

8