BSC120N03MSGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2002

ECCN Code :

EAR99

Number of Terminations :

5

Case Connection :

DRAIN

Turn-Off Delay Time :

7 ns

Packaging :

Tape and Reel (TR)

Pin Count :

8

Package / Case :

8-PowerTDFN

Vgs (Max) :

±20V

Rise Time :

4.4ns

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

12m Ω @ 30A, 10V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Halogen Free :

Halogen Free

Lead Free :

Contains Lead

Continuous Drain Current (ID) :

11A

Fall Time (Typ) :

5 ns

Vgs(th) (Max) @ Id :

2V @ 250μA

Turn On Delay Time :

7.9 ns

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Power Dissipation :

28W

Contact Plating :

Tin

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 15V

Series :

OptiMOS™

Radiation Hardening :

No

Mounting Type :

Surface Mount

Terminal Form :

Flat

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

16V

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

26 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Power Dissipation-Max :

2.5W Ta 28W Tc

Mount :

Surface Mount

Additional Feature :

AVALANCHE RATED

JESD-30 Code :

R-PDSO-F5

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

11A Ta 39A Tc

Max Dual Supply Voltage :

30V

Pbfree Code :

No

Number of Pins :

8