BSC120N03LSG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Max Dual Supply Voltage :

30V

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Rise Time :

2.2ns

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

12m Ω @ 30A, 10V

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

JESD-30 Code :

R-PDSO-F5

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Vgs (Max) :

±20V

Terminal Form :

Flat

Package / Case :

8-PowerTDFN

Series :

OptiMOS™

FET Type :

N-Channel

Halogen Free :

Halogen Free

Pin Count :

8

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 15V

Case Connection :

DRAIN

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

12A Ta 39A Tc

Transistor Element Material :

SILICON

Factory Lead Time :

26 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

12A

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Power Dissipation :

28W

Power Dissipation-Max :

2.5W Ta 28W Tc

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

2.7 ns

ECCN Code :

EAR99

Mount :

Surface Mount

Pbfree Code :

No

Lead Free :

Contains Lead

Fall Time (Typ) :

2.2 ns

Published :

2013

Number of Pins :

8

JESD-609 Code :

e3

Number of Terminations :

5

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Turn-Off Delay Time :

12 ns