BSC120N03LSG
- Mfr.Part #
- BSC120N03LSG
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 8,221
- In Stock :
- 8,221
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Pin Count :
- 8
- Series :
- OptiMOS™
- Terminal Form :
- Flat
- Turn-Off Delay Time :
- 12 ns
- Rise Time :
- 2.2ns
- Package / Case :
- 8-PowerTDFN
- Published :
- 2013
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- JESD-609 Code :
- e3
- Continuous Drain Current (ID) :
- 12A
- Halogen Free :
- Halogen Free
- Rds On (Max) @ Id, Vgs :
- 12m Ω @ 30A, 10V
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- JESD-30 Code :
- R-PDSO-F5
- Current - Continuous Drain (Id) @ 25°C :
- 12A Ta 39A Tc
- Packaging :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1200pF @ 15V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Dual Supply Voltage :
- 30V
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Turn On Delay Time :
- 2.7 ns
- Number of Terminations :
- 5
- Case Connection :
- DRAIN
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 26 Weeks
- Pbfree Code :
- No
- Number of Pins :
- 8
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Fall Time (Typ) :
- 2.2 ns
- Power Dissipation :
- 28W
- Power Dissipation-Max :
- 2.5W Ta 28W Tc
- Additional Feature :
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Number of Elements :
- 1
- Lead Free :
- Contains Lead
- Datasheets
- BSC120N03LSG

N-Channel Tape & Reel (TR) 12m Ω @ 30A, 10V ±20V 1200pF @ 15V 15nC @ 10V 8-PowerTDFN
BSC120N03LSGATMA1 Overview
A device's maximal input capacitance is 1200pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 12A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 12 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 2.7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.By using 30V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
BSC120N03LSGATMA1 Features
a continuous drain current (ID) of 12A
the turn-off delay time is 12 ns
BSC120N03LSGATMA1 Applications
There are a lot of Infineon Technologies
BSC120N03LSGATMA1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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