BSC119N03MSCG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

2.5W (Ta), 28W (Tc)

Polarity/Channel Type :

N-Channel

Drain to Source Voltage (Vdss) :

30 V

Terminal Form :

Flat

JESD-30 Code :

R-PDSO-F5

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

156 A

DS Breakdown Voltage-Min :

30 V

Gate Charge (Qg) (Max) @ Vgs :

20 nC @ 10 V

Package / Case :

8-PowerTDFN

Rds On (Max) @ Id, Vgs :

11.9mOhm @ 30A, 10V

Terminal Finish :

MATTE TIN

Transistor Element Material :

SILICON

Series :

OptiMOS™3

Vgs (Max) :

±20V

Case Connection :

DRAIN

Terminal Position :

Dual

JESD-609 Code :

e3

Operating Temperature :

-55°C ~ 150°C (TJ)

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Supplier Device Package :

PG-TDSON-8

Number of Terminals :

5

Configuration :

SINGLE WITH BUILT-IN DIODE

Package Shape :

RECTANGULAR

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

11A (Ta), 39A (Tc)

Package :

Bulk

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2V @ 250μA

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

10 mJ

Input Capacitance (Ciss) (Max) @ Vds :

1500 pF @ 15 V

Manufacturer :

Infineon Technologies AG

Reach Compliance Code :

Unknown

Operating Mode :

ENHANCEMENT MODE

Pin Count :

8

Drain-source On Resistance-Max :

0.0119 Ω

Technology :

MOSFET (Metal Oxide)

FET Feature :

-

Mounting Type :

Surface Mount

Product Status :

Active