BFS505,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - RF

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

3

Highest Frequency Band :

L B

Current - Collector (Ic) (Max) :

18mA

Published :

1997

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-G3

Number of Elements :

1

Operating Temperature :

175°C TJ

Mounting Type :

Surface Mount

JESD-609 Code :

e3

HTS Code :

8541.21.00.75

Terminal Position :

Dual

Configuration :

Single

Transition Frequency :

9000MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

LOW NOISE, HIGH RELIABILITY

Packaging :

Tape and Reel (TR)

Polarity/Channel Type :

NPN

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

15V

Terminal Finish :

Tin (Sn)

Frequency - Transition :

9GHz

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation-Max (Abs) :

0.15W

Qualification Status :

Not Qualified

Surface Mount :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 6V

Terminal Form :

Gull wing

Pin Count :

3

Base Part Number :

BFS505

Power - Max :

150mW

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Transistor Application :

AMPLIFIER

Package / Case :

SC-70, SOT-323

Power Dissipation Ambient-Max :

0.15W

Noise Figure (dB Typ @ f) :

1.2dB ~ 2.1dB @ 900MHz