BFR843EL3E6327XTSA1
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- Mfr.Part #
- BFR843EL3E6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- RF TRANS NPN 2.6V TSLP-3-10
- Stock
- 24,000
- In Stock ：
- 24,000
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Published :
- 2013
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Configuration :
- Single
- Terminal Form :
- NO LEAD
- Case Connection :
- Emitter
- Transistor Application :
- AMPLIFIER
- Halogen Free :
- Halogen Free
- Max Power Dissipation :
- 125mW
- Mount :
- Surface Mount
- JESD-609 Code :
- e4
- Number of Terminations :
- 3
- Max Collector Current :
- 55mA
- Number of Elements :
- 1
- Package / Case :
- 3-XFDFN
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 2.6V
- Terminal Finish :
- Gold (Au)
- Terminal Position :
- BOTTOM
- Factory Lead Time :
- 8 Weeks
- Lead Free :
- Lead Free
- Gain :
- 25.5dB
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 125mW
- Collector Emitter Breakdown Voltage :
- 2.6V
- Highest Frequency Band :
- X B
- Collector Emitter Voltage (VCEO) :
- 2.25V
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 2.9V
- Datasheets
- BFR843EL3E6327XTSA1
BFR843EL3E6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Infineon Technologies stock available at
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| BFR840L3RHESDE6327XTSA1 | Infineon Technologies | 325 | RF TRANS NPN 2.6V 75GHZ TSLP-3 |
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